Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers

A comprehensive fully self-consistent model of oxide-confined GaAs-based vertical-cavity surface-emitting diode lasers (VCSELs) with GaInP/AlGaInP quantum-well active regions to simulate their room-temperature (RT) continuous-wave (CW) operation is presented. The model takes into consideration all observed or expected special features of GaInP/AlGaInP VCSELs. A complete set of model parameters is given. The model enables a deeper understanding of a VCSEL operation with full complexity of many inter-related physical phenomena taking place within its volume. It may also be used to design and optimize the above VCSEL structures for their numerous applications, in particular as sources of the 650 nm carrier wave in communication systems using plastic optical fibres. With the aid of this model, anticipated VCSEL RT CW performance characteristics may be determined.

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