AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications

We report the performance of an AlInAs/GaInAs/InP DHBT with a new collector design. The base-collector junction was formed with an all arsenide chirped superlattice with linear variation in the average composition. A doping dipole was inserted at the ends of the superlattice to cancel the quasielectric field. The conduction band offset between AlInAs and InP enabled hot electrons to be launched into the InP collector. The new design resulted in an excellent combination of speed and breakdown voltage with superior microwave power performance at X-band. Output power of 2 W (5.6 W/mm) with 70% power-added-efficiency at 9 GHz was achieved.

[1]  Katsuya Kosaki,et al.  1 W Ku-band AlGaAs/GaAs power HBTs with 72% peak power-added efficiency , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[2]  D. Pan,et al.  A proposed collector design of double heterojunction bipolar transistors for power applications , 1995, IEEE Electron Device Letters.

[3]  P. K. Ikalainen,et al.  20 W linear, high efficiency internally matched HBT at 7.5 GHz , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[4]  O. Ueda,et al.  Ultrahigh f/sub T/ and f/sub max/ new self-alignment InP/InGaAs HBT's with a highly Be-doped base layer grown by ALE/MOCVD , 1995, IEEE Electron Device Letters.

[5]  A. Schmitz,et al.  Power performance and reliability of AlInAs/GaInAs/InP double heterojunction bipolar transistors , 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

[6]  C. Palmstrøm,et al.  A f/sub T/=175 GHz carbon-doped base InP/InGaAs HBT , 1993, Proceedings of IEEE International Electron Devices Meeting.

[7]  B. W. Veasel,et al.  A 25 ohm, 2W, 8-14 GHz HBT power MMIC with 20 dB gain and 40% power added efficiency , 1994 .

[8]  S. Chandrasekhar,et al.  Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors , 1992 .