Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source

P-type ZnO films with carrier density 3‐610 18 cm ˇ3 , resistivity 2‐5Ocm and Hall mobility=0.1‐0.4cm 2 V ˇ1 s ˇ1 have been grown on fused silica and glass substrate by pulsed laser reactive deposition using a pure metal Zn target in N2O plasma. The N acceptor doping was eectively enhanced using the active N formed by N2O gas passing through an electron resonance source during the pulsed laser reactive deposition process. P-type conduction was achieved by optimizing the microwave-input power (E) and deposition pressure (PN2O). These electrical properties are suAcient for some practical applications. We expect this result to facilitate the fabrication of transparent p‐n homojunctions suitable for light-emitting diodes. # 2001 Elsevier Science B.V. All rights reserved.

[1]  Mengyan Shen,et al.  Optically pumped lasing of ZnO at room temperature , 1991 .

[2]  Tomoji Kawai,et al.  p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping , 1999 .

[3]  T. Kawai,et al.  Atomic layer control of the growth of oxide superconductors using laser molecular beam epitaxy , 1993 .

[4]  O. Sankey,et al.  Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO , 1983 .

[5]  Andrew G. Glen,et al.  APPL , 2001 .

[6]  R. Miles,et al.  Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis , 2000 .

[7]  Hiroshi Katayama-Yoshida,et al.  Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO , 1999 .

[8]  Daniel Lincot,et al.  Heteroepitaxial electrodeposition of zinc oxide films on gallium nitride , 1999 .

[9]  P. Searson,et al.  ZnO quantum particle thin films fabricated by electrophoretic deposition , 1999 .

[10]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[11]  Kakuya Iwata,et al.  Nitrogen-induced defects in ZnO : N grown on sapphire substrate by gas source MBE , 2000 .

[12]  M. Kasuga,et al.  Electronic Properties of Vapor-Grown Heteroepitaxial ZnO Film on Sapphire , 1983 .

[13]  Masashi Kawasaki,et al.  An oxide-diluted magnetic semiconductor: Mn-doped ZnO , 1999 .

[14]  D. Look,et al.  Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire , 1999 .

[15]  J. J. Lander.  Reactions of Lithium as a donor and an acceptor in ZnO , 1960 .

[16]  K. Chopra,et al.  Transparent conductors—A status review , 1983 .

[17]  Koji Yano,et al.  Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition , 1997 .

[18]  W. C. Hughes,et al.  MBE growth and properties of ZnO on sapphire and SiC substrates , 1996 .