Characterization of Elastic Modulus Across the (Al1–xScx)N System Using DFT and Substrate-Effect-Corrected Nanoindentation
暂无分享,去创建一个
Kevin Talley | Geoff L. Brennecka | Paul Constantine | Cristian V. Ciobanu | Andriy Zakutayev | Sukriti Manna | Dong Wu | G. Brennecka | C. Packard | P. Constantine | C. Ciobanu | A. Zakutayev | Sukriti Manna | Dong Wu | Corinne E. Packard | Yachao Chen | K. Talley | Yachao Chen
[1] G. Brennecka,et al. Implications of heterostructural alloying for enhanced piezoelectric performance of (Al,Sc)N , 2018, Physical Review Materials.
[2] Geoff L. Brennecka,et al. Enhanced piezoelectric response of AlN via CrN alloying. , 2017, 1708.00490.
[3] P. Frach,et al. Effect of scandium content on structure and piezoelectric properties of AlScN films deposited by reactive pulse magnetron sputtering , 2017 .
[4] S. Lany,et al. Synthesis and Characterization of (Sn,Zn)O Alloys , 2016 .
[5] P. Delobelle,et al. Modeling and characterization of piezoelectric beams based on an aluminum nitride thin‐film layer , 2016 .
[6] T. Laurila,et al. Piezoelectric coefficients and spontaneous polarization of ScAlN , 2015, Journal of physics. Condensed matter : an Institute of Physics journal.
[7] T. Yokoyama,et al. Highly enhanced piezoelectric property of co-doped AlN , 2015 .
[8] U. Schmid,et al. Circular test structure for the determination of piezoelectric constants of ScxAl1−xN thin films applying Laser Doppler Vibrometry and FEM simulations☆ , 2015, Sensors and actuators. A, Physical.
[9] T. Yokoyama,et al. Effect of Mg and Zr co-doping on piezoelectric AlN thin films for bulk acoustic wave resonators , 2014, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control.
[10] Y. Cordier,et al. Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application , 2014 .
[11] Wai Yuen Fu,et al. Elastic constants and critical thicknesses of ScGaN and ScAlN , 2013 .
[12] David L. Olmsted,et al. Efficient stochastic generation of special quasirandom structures , 2013 .
[13] Houfang Liu,et al. Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature , 2013 .
[14] Gianluca Piazza,et al. Piezoelectric aluminum nitride thin films for microelectromechanical systems , 2012 .
[15] M. Jarrell,et al. Electronic, structural, and elastic properties of metal nitrides XN (X = Sc, Y): A first principle study , 2012, 1206.4277.
[16] Paul Muralt,et al. Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1-xN thin films , 2012 .
[17] A. L. Ivanovskii,et al. Elastic and electronic properties of hexagonal rhenium sub‐nitrides Re3N and Re2N in comparison with hcp‐Re and wurtzite‐like rhenium mononitride ReN , 2010, 1011.3932.
[18] G. Wingqvist,et al. Wurtzite-structure Sc1-xAlxN solid solution films grown by reactive magnetron sputter epitaxy structural characterization and first-principles calculations , 2010 .
[19] Y. Lai,et al. Nanomechanical properties of AlN(1 0 3) thin films by nanoindentation , 2010 .
[20] T. Lin,et al. Berkovich Nanoindentation on AlN Thin Films , 2010, Nanoscale research letters.
[21] C. Ciobanu,et al. Elastic constants of β -eucryptite studied by density functional theory , 2009, 0912.4525.
[22] A. Teshigahara,et al. Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films , 2009 .
[23] Y. Lai,et al. Structural and mechanical characteristics of (1 0 3) AlN thin films prepared by radio frequency magnetron sputtering , 2009 .
[24] J. Vlassak,et al. Determining the elastic modulus and hardness of an ultra-thin film on a substrate using nanoindentation , 2009 .
[25] P. Blaha,et al. Calculation of the lattice constant of solids with semilocal functionals , 2009 .
[26] M. Akiyama,et al. Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering , 2009, Advanced materials.
[27] A. Ruban,et al. Ab initio calculations of elastic properties of Pt–Sc alloys , 2008 .
[28] Lukasz Nieradko,et al. AlN as an actuation material for MEMS applications: The case of AlN driven multilayered cantilevers , 2008 .
[29] Oliver Ambacher,et al. Piezoelectric properties of polycrystalline AlN thin films for MEMS application , 2006 .
[30] F. Ulm,et al. Explicit approximations of the indentation modulus of elastically orthotropic solids for conical indenters , 2004 .
[31] H. Maciel,et al. High textured AlN thin films grown by RF magnetron sputtering; composition, structure, morphology and hardness , 2004 .
[32] L. Vergara,et al. SAW characteristics of AlN films sputtered on silicon substrates. , 2004, Ultrasonics.
[33] K. Yoon,et al. Relationship between residual stress and structural properties of AlN films deposited by r.f. reactive sputtering , 2003 .
[34] Omar Elmazria,et al. Surface acoustic wave propagation in aluminum nitride-unpolished freestanding diamond structures , 2002 .
[35] Martin Eickhoff,et al. Nanotechnology for SAW devices on AlN epilayers , 2002 .
[36] B. Bhushan,et al. A Review of Nanoindentation Continuous Stiffness Measurement Technique and Its Applications , 2002 .
[37] Ying-Chung Chen,et al. Synthesis of C-Axis-Oriented Aluminum Nitride Films by Reactive RF Magnetron Sputtering for Surface Acoustic Wave , 2001 .
[38] G. Kresse,et al. From ultrasoft pseudopotentials to the projector augmented-wave method , 1999 .
[39] Burke,et al. Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.
[40] G. Kresse,et al. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set , 1996 .
[41] A. Steckenborn,et al. Determination of Young's moduli of micromechanical thin films using the resonance method , 1992 .
[42] M. A. Odintzov,et al. AlN films for SAW sensors , 1991 .
[43] K. Petersen,et al. Young’s modulus measurements of thin films using micromechanics , 1979 .
[44] R. D. Shannon. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides , 1976 .
[45] H. Monkhorst,et al. SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS , 1976 .
[46] F. Lotgering,et al. Topotactical reactions with ferrimagnetic oxides having hexagonal crystal structures—I , 1959 .
[47] John F Nye. Physical Properties of Crystals: Their Representation by Tensors and Matrices , 1957 .
[48] R. Hill. The Elastic Behaviour of a Crystalline Aggregate , 1952 .
[49] H. Y. Yu,et al. The effect of substrate on the elastic properties of films determined by the indentation test — axisymmetric boussinesq problem , 1990 .