Influence of the liquid phase epitaxial growth conditions on composition profile for Hg1-xCdxTe film

[1]  Kun Liu,et al.  INFLUENCE OF MERCURY PRESSURE ON LIQUIDUS TEMPERATURE AND COMPOSITION OF LIQUID-PHASE EPITAXIAL (HG,CD)TE , 1995 .

[2]  J. M. Kim,et al.  Slider liquid phase epitaxial growth of Hg0.8Cd0.2Te, Hg0.7Cd0.3Te and Hg0.3Cd0.7 Te with precise control of alloy compositions , 1992 .

[3]  A. Takami,et al.  High quality p-Cd0.22Hg0.78Te grown by liquid-phase epitaxy , 1992 .

[4]  G. Blackmore,et al.  Improved control of composition and electrical properties of liquid phase epitaxial (CdHg)Te layers , 1992 .

[5]  Tai-bor Wu,et al.  A new attachment for stable control of mercury pressure in the slider LPE of Hg1−xCdxTe , 1988 .

[6]  D. F. Weirauch,et al.  Supercooling studies and LPE growth of Hg 1–x Cd x Te , 1986 .

[7]  N. Yellin,et al.  Diffusion of Cd and Hg in liquid Te , 1986 .

[8]  J. Brice A numerical description of the CdHgTe phase diagram , 1986 .

[9]  H. Gatos,et al.  Mercury‐Pressure‐Induced Epitaxy of HgCdTe , 1984 .

[10]  A. Chernov Modern Crystallography III , 1984 .

[11]  Lawrence Rozier Holland,et al.  Measured thermal diffusivity of Hg1−xCdxTe solids and melts , 1983 .

[12]  T. Harman Slider LPE of Hg1-xCdxTe using mercury pressure controlled growth solutions , 1981 .

[13]  Theodore C. Harman,et al.  Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te system , 1980 .

[14]  J. Brice The variation of interface segregation coefficients with growth rate of crystals , 1971 .