A 2—18-GHz monolithic distributed amplifier using dual-gate GaAs FET's

This paper describes a 2-18-GHz monolithic distributed amplifier with over 6-dB gain, ± 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm, The amplifier is designed with dual-gate GaAs FET's instead of single-gate FET's for maximum gain over the design bandwidth. Cascaded amplifier performance will also be presented.

[1]  K. R. Gleason,et al.  A DC-12 GHz monolithic GaAsFET distributed amplifier , 1982 .

[2]  L. Dickens,et al.  Distributed cascode amplifier and noise figure modeling of an arbitrary amplifier configuration , 1984, 1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[3]  T. R. Kritzer,et al.  On Theory and Performance of Solid-State Microwave Distributed Amplifiers , 1983 .

[4]  W.R. Hewlett,et al.  Distributed Amplification , 1948, Proceedings of the IRE.

[5]  R. Anderson,et al.  Sub-Half-Micron GaAs FETS for Applications Through K Band , 1981, 1981 IEEE MTT-S International Microwave Symposium Digest.