Computer study of a high-voltage a p-π-n--n+diode and comparison with a field-limiting ring structure

The paper presents a two-dimensional numerical analysis of a high-voltage p-π-n^--n⁺structure. The effect of the device parameters, such as the implanted dose of the π-region, the main junction depth, and the charges at the interface, is studied. A comparison between the p-π-n^--n⁺and field-limiting ring structures is given.