Modeling the gate more accurately for power MOSFETs

In recent years, power MOSFET devices have replaced the bipolar transistor. However, the power MOSFET is a fairly new device and current modeling techniques have not produced an accurate simulation of the gate to source. The method presented here generates a more accurate model of the transient behavior and gate to source characteristics of the power MOSFET. The results provide a better correlation between the MOSFET model and the actual device. >

[1]  H. P. Yee,et al.  SPICE models for power MOSFETs: an update , 1988, APEC '88 Third Annual IEEE Applied Power Electronics Conference and Exposition.

[2]  M. I. Castro Simas,et al.  Experimental characterization of power VDMOS transistors in commutation and a derived model for computer-aided design , 1989 .

[3]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.