Nonlinear Biasing Resistors for Microwave Tunnel-Diode Oscillators (Correspondence)
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By using a nonlinear rather than a linear stabilizing resistor in tunnel-diode oscillator and amplifier circuits, the dc power dissipation in the resistor may be reduced by a factor of 3 for typical germanium tunnel diodes, and by a factor of 6 for typical gallium arsenide tunnel diodes. At the same time ac loading by the resistor is reduced. Such nonlinear stabilizing resistors may consist of reverse- or forward-biased heavily doped pn junctions.
[1] R. A. Logan,et al. Internal Field Emission at Narrow Silicon and Germanium p-n Junctions , 1960 .
[2] H. Sommers. Tunnel Diodes as High-Frequency Devices , 1959, Proceedings of the IRE.