论文信息 - Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise - 字舞流文

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

T. Schäpers | J. Schubert | E. Bakkers | S. Gazibegović | D. Car | M. Liebmann | M. Morgenstern | S. Heedt | Kilian Flöhr | Felix Jekat | B. Pestka