A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure

We describe high power 36 W CW operation at 30 V using AlGaN/GaN HEMTs on SiC. Surface-charge-controlled structure, consisting of n-type doped thin GaN cap layer on AlGaN/GaN HEMT structure, is used to obtain high gate-drain breakdown voltage and to reduce current collapse. By optimizing threshold voltage of this structure, we obtained a maximum drain current of 1 A/mm and a gate-drain breakdown voltage over 200 V. A 24-mm-wide-gate chip showed output power of 45.6 dBm (36 W) at 2.2 GHz with a liner gain of 9.7 dB.

[1]  P. M. Asbeck,et al.  Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET , 1999 .

[2]  Y. Okamoto,et al.  A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[3]  Umesh K. Mishra,et al.  Very-high power density AlGaN/GaN HEMTs , 2001 .

[4]  C. Gaquiere,et al.  Current instabilities in GaN-based devices , 2001, IEEE Electron Device Letters.

[5]  Walter Kruppa,et al.  Trapping effects and microwave power performance in AlGaN/GaN HEMTs , 2001 .

[6]  T.J. Smith,et al.  Wide bandgap semiconductor devices and MMICs for RF power applications , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[7]  U. Mishra,et al.  The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs , 2001 .

[8]  H. Kim,et al.  Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs , 2001, IEEE Electron Device Letters.

[9]  N. Hara,et al.  Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).