High luminance tapered diode lasers for flying-spot display applications

Flying-spot display applications require high luminance (> 100 TCd/m2) red-emitting lasers. High luminance is defined as a high optical output power and a nearly diffraction limited beam quality at a wavelength with a good visibility of the human eye. Diode lasers, with all their beneficial properties such as direct modulation capability, small size and good electro-optical efficiency, are so far unable to achieve such high luminance, due to catastrophic optical mirror damage (COMD) caused by high facet loads. (See manuscript for full abstract.)

[1]  Robert J. Lang,et al.  High power 635 nm low-divergence ridge waveguide singlemode lasers , 1998 .

[2]  M. Weyers,et al.  High-power red laser diodes grown by MOVPE , 2007 .

[3]  A. E. Siegman,et al.  How to (Maybe) Measure Laser Beam Quality , 1998 .

[4]  B. Sumpf,et al.  650-nm InGaP Broad Area Lasers With 5000-h Reliable Operation at 600 mW , 2007, IEEE Photonics Technology Letters.

[5]  D. Feise,et al.  Progress in efficient, high-brightness red-emitting tapered diode lasers for display applications , 2011, IEEE Photonic Society 24th Annual Meeting.

[6]  Götz Erbert,et al.  Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes , 2008 .

[7]  Katrin Paschke,et al.  High-brightness 635nm tapered diode lasers with optimized index guiding , 2010, LASE.

[8]  N. Linder,et al.  900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm , 2004, Conference on Lasers and Electro-Optics, 2004. (CLEO)..

[9]  K. Yodoshi,et al.  AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/, 1993 .

[10]  Markus Pessa,et al.  SS-MBE-grown short red wavelength range AlGaInP laser structures , 2004, SPIE Photonics Europe.

[11]  M. Weyers,et al.  Conductively Cooled 637-nm InGaP Broad-Area Lasers and Laser Bars With Conversion Efficiencies Up to 37% and a Small Vertical Far Field of 30$^{\circ}$ , 2008, IEEE Photonics Technology Letters.

[12]  U. Zeimer,et al.  Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers , 2005, IEEE Photonics Technology Letters.

[13]  Hiroyuki Uchida,et al.  Characteristics of red-emitting broad area stripe laser diodes with zinc diffused window structures , 2010, LASE.

[14]  M. Weyers,et al.  Twin-Contact 645-nm Tapered Laser With 500-mW Output Power , 2009, IEEE Photonics Technology Letters.

[15]  Bo Lu,et al.  High-power and diffraction-limited red lasers , 2000, Photonics West - Optoelectronic Materials and Devices.

[16]  Motoharu Miyashita,et al.  Short wavelength limitation in high power AlGaInP laser diodes , 2011, LASE.

[17]  Akihiro Shima,et al.  640-nm laser diode for small laser display , 2009, LASE.

[18]  Alexander Sahm,et al.  Room temperature 633 nm tapered diode lasers with external wavelength stabilisation , 2009 .

[19]  R. J. Lang,et al.  400 mW continuous-wave diffraction limited flared unstable resonator laser diode at 635 nm , 1997 .

[20]  K. Paschke,et al.  Beam Properties of 980-nm Tapered Lasers With Separate Contacts: Experiments and Simulations , 2009, IEEE Journal of Quantum Electronics.

[21]  Kohroh Kobayashi,et al.  Low-threshold, highly reliable 630 nm-band AlGaIP visible laser diodes with AlInP buried waveguide , 1996 .

[22]  D. Feise,et al.  Tapered Diode Laser With Reverse Bias Absorber Section , 2009, IEEE Photonics Technology Letters.

[23]  K. Yodoshi,et al.  Low-threshold 630 nm-band AlGaInP multiquantum-well laser diodes grown on misoriented substrates , 1992 .