A 5 V-only virtual ground flash cell with an auxiliary gate for high density and high speed application

A 5 V-only virtual ground flash EEPROM cell with an auxiliary gate is proposed for high-density and high-speed application. The virtual ground auxiliary gate structure achieves a cell area of 2.59 mu m/sup 2/ with a 0.5- mu m technology and enables a fast programming of less than 1 mu s with a drain voltage of 5 V. It also provides a read-out current higher than 100 mu A and a soft-write lifetime greater than 10 years in read operation. The cell is suitable for high-density flash memories beyond 16 M bits.<<ETX>>

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