论文信息 - Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm* - 字舞流文

Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm*

Y. Hao | Jincheng Zhang | Shenglei Zhao | Xiangdong Li | Yunlong He | Haiqing Jiang | Weihang Zhang | Zhenxing Guo | Y. Zou | Jiang Renyuan