Silicon-Carbide MESFET-Based 400 C MEMS Sensing and Data Telemetry

A prototype high-temperature silicon-carbide (SiC) MESFET-based microelectromechanical systems (MEMS) sensing and date telemetry module is reported for harsh environment applications. The module employs a MEMS silicon capacitive pressure sensor performing pressure to frequency conversion and an on-board spiral loop serving as an inductor for the LC res- onator and also as a telemetry antenna. The system demonstrates a high-temperature performance up to 400 C, limited by the SiC MESFET characteristics, and achieves a telemetry distance of 1 m. Index Terms—High-temperature sensing, microelectromechan- ical systems (MEMS) sensor, silicon-carbide (SiC) MESFET, telemetry.

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