Direct and Polymer Bonding of III-V to Processed Silicon-On-Insulator for Hybrid Silicon Evanescent Lasers Fabrication

Photonic integrated circuits offer the potential of realizing low cost and compact optical functions. Recently, Siliconon-insulators (SOI) has been demonstrated as a promising material platform for this photonic integration. As Silicon laser is hampered by its indirect bandgap, they are a great interest to integrate a III-V layer on top of SOI waveguide substrate to achieve light emission and couple this emission to the underlying SOI waveguide circuit.