Surface Evolution of GaP Grown on Si Substrates Using Metalorganic Vapor Phase Epitaxy

GaP surface evolution on Si substrates in the initial growth stage was investigated using atomic force microscopy. The GaP was grown on 4°-misoriented Si substrates at 700–830 °C using metalorganic vapor phase epitaxy. Island growth was predominant below nominal 5 nm thickness at 830 °C. Several antiphase domains (APDs) grew to be 100 nm or longer at nominal 5 nm deposition. They were 5 nm higher than surrounding islands. The surrounding islands formed a layer at a nominal thickness over 5 nm. The layer grew vertically faster than the APDs. Several APDs grew laterally until a layer-thickness exceeded an APD height. The layer finally embedded the APDs. Self-annihilation of APDs was achieved below 40 nm thickness. Similar surface evolution was found at 770 and 800 °C. The APD size decreased with decreasing temperature. Self-annihilation of APDs was achieved below 20 nm thickness at 770 °C.

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