论文信息 - Selected technological aspects of semiconductor samples preparation for Hall effect measurements

Selected technological aspects of semiconductor samples preparation for Hall effect measurements

The article presents comparison of two alternative method of Hall sample preparation–manual "square" shaped and the cloverleaf one made by full photolithography process. The influence of symmetry and contacts configuration on repeatability of 4-point resistance and Hall resistance versus magnetic field characteristics was a Hall sample quality criterion. The characterization was performed in ±15 T magnetic-field range at 80 K and 300 K, for undoped InAs epitaxial layer, deposited on the GaAs substrate using MBE. It was indicated that the sample made by photolithography had better usefulness for Hall characterization, showing broader magnetic field range by two orders of magnitude than the reference one.

[1] L. Faraone,et al. High-Resolution Mobility Spectrum Analysis of Multicarrier Transport in Advanced Infrared Materials , 2012, Journal of Electronic Materials.

[2] D. Schroder. Semiconductor Material and Device Characterization , 1990 .

[3] J. Kim. A matrix formalism for the Hall effect in multicarrier semiconductor systems , 1999 .

[4] A. Braga,et al. Laser induced photodeposition of gold upon p-silicon immersed in chloroauric acid solutions , 1994 .

[5] P. Martyniuk,et al. New wet etching solution molar ratio for processing T2SLs InAs/GaSb nBn MWIR infrared detectors grown on GaSb substrates , 2016 .

[6] C. J. Knickerbocker,et al. What do you measure when you measure resistivity , 1992 .

[7] Jerry R. Meyer,et al. Improved quantitative mobility spectrum analysis for Hall characterization , 1998 .

[8] Piotr Martyniuk,et al. Mobility spectrum analysis of HgCdTe epitaxial layers grown by metalorganic chemical vapour deposition , 2017, Integrated Optics.