Lifetime Calculation Using a Stochastic Reliability Simulator for Analog ICs

Due to the impact of technology downscaling into the nanometer scale, designers have to take into account not only the degradation of circuit performances due to time-zero variability but also the degradation due to time-dependent variability. To evaluate their impact in the circuit performances, a critical metric is the time-dependent yield, the percentage of circuit samples of a particular design that operates correctly with respect to a set of performance constraints, a metric that, due to the presence of time-dependent variability, changes over time. The lifetime of the circuit, or the time the circuit is working above a pre-defined yield threshold can be calculated using the time-dependent yield. These are crucial metrics, even fundamental in many applications. This work proposes a new efficient simulation methodology that can provide an accurate calculation of time-dependent yield and lifetime using a stochastic reliability simulator for analog circuits while keeping CPU times low.

[1]  Ru Huang,et al.  Reliability variability simulation methodology for IC design: An EDA perspective , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[2]  Xin Pan,et al.  Reliability optimization of analog integrated circuits considering the trade-off between lifetime and area , 2012, Microelectron. Reliab..

[3]  Francisco V. Fernández,et al.  Reliability simulation for analog ICs: Goals, solutions, and challenges , 2016, Integr..

[4]  Francisco V. Fernández,et al.  A size-adaptive time-step algorithm for accurate simulation of aging in analog ICs , 2017, 2017 IEEE International Symposium on Circuits and Systems (ISCAS).

[5]  Xin Pan,et al.  Reliability analysis of analog circuits using quadratic lifetime worst-case distance prediction , 2010, IEEE Custom Integrated Circuits Conference 2010.

[6]  Georges Gielen,et al.  Analog IC Reliability in Nanometer CMOS , 2013 .

[7]  Samar K. Saha,et al.  Compact MOSFET Modeling for Process Variability-Aware VLSI Circuit Design , 2014, IEEE Access.

[8]  Ali Emre Pusane,et al.  A lifetime-aware analog circuit sizing tool , 2016, Integr..

[9]  T. Grasser Bias Temperature Instability for Devices and Circuits , 2014 .

[10]  Sani R. Nassif Technology modeling and characterization beyond the 45nm node , 2008, 2008 Asia and South Pacific Design Automation Conference.

[11]  M. Nafría,et al.  Probabilistic defect occupancy model for NBTI , 2011, 2011 International Reliability Physics Symposium.

[12]  Ali Emre Pusane,et al.  A deterministic aging simulator and an analog circuit sizing tool robust to aging phenomena , 2015, 2015 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD).

[13]  Bogdan Tudor,et al.  MOSRA: An efficient and versatile MOS aging modeling and reliability analysis solution for 45nm and below , 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

[14]  Francisco V. Fernández,et al.  Including a stochastic model of aging in a reliability simulation flow , 2017, 2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD).