Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell

[1]  F. Jedema,et al.  Phase-change materials: designing optical media of the future. , 2007, Nature materials.

[2]  Felice Crupi,et al.  Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods , 2015 .

[3]  Byung-Gook Park,et al.  Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications , 2016 .

[4]  Byung-Gook Park,et al.  Integrate-and-Fire Neuron Circuit and Synaptic Device using Floating Body MOSFET with Spike Timing- Dependent Plasticity , 2015 .

[5]  Byung-Gook Park,et al.  Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications , 2015 .

[6]  Chong Liu,et al.  Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements , 2015, IEICE Trans. Electron..

[7]  H. Ohno,et al.  Current-induced torques in magnetic materials. , 2012, Nature materials.

[8]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[9]  Sungho Kim,et al.  Self-rectifying resistive switching behavior observed in Si3N4-based resistive random access memory devices , 2015 .

[10]  Byung-Gook Park,et al.  Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure , 2015 .

[11]  Byung-Gook Park,et al.  A New Programming Method to Alleviate the Program Speed Variation in Three-Dimensional Stacked Array NAND Flash Memory , 2014 .

[12]  Byung-Gook Park,et al.  Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications , 2015 .

[13]  Byung-Gook Park,et al.  Tuning tunnel barrier in Si3N4-based resistive memory embedding SiO2 for low-power and high-density cross-point array applications , 2016 .

[14]  Sungho Kim,et al.  All ITO-based transparent resistive switching random access memory using oxygen doping method , 2015 .

[15]  Changhwan Shin,et al.  Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage , 2015 .

[16]  Byung-Gook Park,et al.  Neuron Circuit Using a Thyristor and Inter-neuron Connection with Synaptic Devices , 2015 .

[17]  Byung-Gook Park,et al.  Fully Si compatible SiN resistive switching memory with large self-rectification ratio , 2016 .

[18]  Byung-Gook Park,et al.  Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals , 2015, IEICE Trans. Electron..

[19]  Tae Geun Kim,et al.  Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films , 2015 .

[20]  Songlin Feng,et al.  An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell , 2012, IEEE Electron Device Letters.

[21]  Byung-Gook Park,et al.  A Novel Sensing Scheme for Reliable Read Operation of Ultrathin-Body Vertical nand Flash Memory Devices , 2011, IEEE Transactions on Electron Devices.

[22]  D. Ielmini,et al.  Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.

[23]  Woo Young Choi,et al.  A Finite Element Model for Bipolar Resistive Random Access Memory , 2014 .

[24]  Byung-Gook Park,et al.  Integrate-and-fire neuron circuit and synaptic device with a floating body MOSFET , 2014, 2014 Silicon Nanoelectronics Workshop (SNW).