Flexible High-$\kappa$/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric

Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 cm2 and thickness: 25 μm) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections.

[1]  A. Oates,et al.  Reliability of porous low-k dielectrics under dynamic voltage stressing , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

[2]  F. Chang,et al.  Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors. , 2010, ChemSusChem.

[3]  M. K. Hota,et al.  Flexible metal–insulator–metal capacitors on polyethylene terephthalate plastic substrates , 2012 .

[4]  John A. Rogers,et al.  Theoretical and Experimental Studies of Bending of Inorganic Electronic Materials on Plastic Substrates , 2008 .

[5]  P. Banerjee,et al.  Uniqueness in activation energy and charge-to-breakdown of highly asymmetrical DRAM Al/sub 2/O/sub 3/ cell capacitors , 2004, IEEE Electron Device Letters.

[6]  M. Gaynes,et al.  Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology , 2012, 2012 International Electron Devices Meeting.

[7]  Galo A. Torres Sevilla,et al.  Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric , 2013 .

[8]  Davood Shahrjerdi,et al.  Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic. , 2013, Nano letters.

[9]  John A. Rogers,et al.  Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers , 2013 .

[10]  Fen Chen,et al.  Time-dependent dielectric breakdown evaluation of deep trench capacitor with sidewall hemispherical, polysilicon grains for gigabit DRAM technology , 2002, IEEE International Integrated Reliability Workshop Final Report, 2002..

[11]  Babak A. Parviz,et al.  Self-assembled single-crystal silicon circuits on plastic , 2006, Proceedings of the National Academy of Sciences.

[12]  D.S.H. Chan,et al.  A flexible polymer memory device , 2007 .

[13]  Seungjun Kim,et al.  Flexible memristive memory array on plastic substrates. , 2011, Nano letters.

[14]  Audrey M. Bowen,et al.  Transfer Printing Techniques for Materials Assembly and Micro/Nanodevice Fabrication , 2012, Advanced materials.

[15]  J. Suehle,et al.  A Flexible Solution-Processed Memristor , 2009, IEEE Electron Device Letters.

[16]  Kinam Kim,et al.  Technology for sub-50nm DRAM and NAND flash manufacturing , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[17]  Kimoon Lee,et al.  Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer , 2009 .

[18]  Xiaolin Zheng,et al.  Fabricating nanowire devices on diverse substrates by simple transfer-printing methods , 2010, Proceedings of the National Academy of Sciences.

[19]  Muhammad M. Hussain,et al.  Silicon fabric for multi-functional applications , 2013, 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII).

[20]  Muhammad M. Hussain,et al.  Flexible semi‐transparent silicon (100) fabric with high‐k/metal gate devices , 2013 .

[21]  M. Meneghini,et al.  Impact of hot electrons on the reliability of AlGaN/GaN High Electron Mobility Transistors , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

[22]  M. M. Hussain,et al.  Mechanically flexible optically transparent porous mono-crystalline silicon substrate , 2012, 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS).

[23]  T. Sugii,et al.  Reliability study of magnetic tunnel junction with naturally oxidized MgO barrier , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

[24]  M. K. Hota,et al.  Graphene oxide-based flexible metal–insulator–metal capacitors , 2013 .