论文信息 - Negative capacitance of GaAs homojunction far-infrared detectors

Negative capacitance of GaAs homojunction far-infrared detectors

Bias, frequency and temperature-dependent capacitance characteristics of p-GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared detectors are reported. A strong negative capacitance phenomenon has been observed. Unlike in other devices, even up to 1 MHz in HIWIP, the negative capacitance value keeps increasing with frequency, giving a stronger effect. The origin of this effect is believed to be due to the carrier capture and emission at interface states. Fitting data based on charging-discharging current and the inertial conducting current model show good agreement with the experimental observations.

[1] M. Ershov,et al. Nonuniform vertical charge transport and relaxation in quantum well infrared detectors , 1998 .

[2] C. Champness,et al. Anomalous inductive effect in selenium Schottky diodes , 1990 .

[3] W. Shen,et al. Photoconductive generation mechanism and gain in internal photoemission infrared detectors , 1998 .

[4] M. Buchanan,et al. Bias effects in high performance GaAs homojunction far-infrared detectors , 1997 .

[5] Ludmila Eckertova,et al. Physics of thin films , 1977 .

[6] M. Buchanan,et al. Unusual capacitance behavior of quantum well infrared photodetectors , 1997 .

[7] Steven E. Laux,et al. Techniques for small-signal analysis of semiconductor devices , 1985, IEEE Transactions on Electron Devices.

[8] A. Jonscher. The physical origin of negative capacitance , 1986 .

[9] A. G. U. Perera,et al. Low-frequency noise and interface states in GaAs homojunction far-infrared detectors , 1999 .

[10] Edward S. Yang,et al. Negative capacitance at metal-semiconductor interfaces , 1990 .

[11] T. Noguchi,et al. Negative Capacitance of Silicon Diode with Deep Level Traps , 1980 .

[12] Hui C. Liu,et al. Segregation of Si δ doping in GaAs‐AlGaAs quantum wells and the cause of the asymmetry in the current‐voltage characteristics of intersubband infrared detectors , 1993 .