The Use Of Jet-vapor Deposited Silicon Nitride For Scaled Dram Applications

This paper will report our recent work on the properties of jet-vapor deposited (JVD) ultrathin silicon nitride films, deposited at room temperature on poly-Si bottom electrode and then annealed at 800 "C in nitrogen, for potential applications in future DRAM storage cells. Compaxed to the conventional ONO approach, a majoir advantage of JVD nitride is the elimination of intentional oxide with improved leakage current and dielectric reliability. Our results sugge,st that the use of the JVD nitride could lead to at least 2 more generations of continued scaling beyond what is possible with the conventional ONO approach.

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