论文信息 - Yttrium- and Terbium-Based Interlayer on $ \hbox{SiO}_{2}$ and $\hbox{HfO}_{2}$ Gate Dielectrics for Work Function Modulation of Nickel Fully Silicided Gate in nMOSFET - 字舞流文

Yttrium- and Terbium-Based Interlayer on $ \hbox{SiO}_{2}$ and $\hbox{HfO}_{2}$ Gate Dielectrics for Work Function Modulation of Nickel Fully Silicided Gate in nMOSFET

Xin Peng Wang | D. Kwong | Y. Yeo | G. Samudra | C. Tung | W. Hwang | R.T.-P. Lee | A. Lim