论文信息 - Direct measurement of hot hole distribution in an SiGe unipolar transistor structure

Direct measurement of hot hole distribution in an SiGe unipolar transistor structure

A novel SiGe hot hole transistor structure is fabricated and used to study the hot hole distribution in the thin base created by current injection. A hot carrier spectroscopy technique is employed, and hot hole distributions are directly measured.

H. Liu | J. Simmons | M. Buchanan | J. Baribeau | J. Li

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