We will discuss our recent results using a second generation radiation sensitive developable 193 Bottom Antireflective coatings (DBARCs). These DBARC materials are made solvent resistant the application of a resist coating on top of them through a crosslinking mechanism that is reversible by acid catalyzed reaction upon exposure of the DBARC/resist stack. Typically this is done by crosslinking a copolymer containing a hydroxyl moiety with a polyfunctional vinylether during post applied bake. This DBARC approach, after exposure, allows for development of the stack in exposed areas down to the substrate eschewing the plasma etch breakthrough needed for conventional bottom antireflective coatings which are irreversibly crosslinked. We will give an update on the performance our latest 193 nm DBARC materials used with different Implant 193 nm resists when using a phase shift mask with off axis illumination.