The nucleation of coherent semiconductor islands during the Stranski-Krastanov growth induced by elastic strains

[1]  S. Araki,et al.  Fermi surface instability in CeRh2Si2 under pressure , 2001 .

[2]  F. Schmitt,et al.  Kinetic model of coherent island formation in the case of self-limiting growth , 2001 .

[3]  O. Pchelyakov,et al.  Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures , 2001 .

[4]  Dieter Bimberg,et al.  Spontaneous ordering of nanostructures on crystal surfaces , 1999 .

[5]  Bert Voigtländer,et al.  Kinetically Self-Limiting Growth of Ge Islands on Si(001) , 1999 .

[6]  R. Stanley Williams,et al.  Evolution of Ge islands on Si(001) during annealing , 1999 .

[7]  S. Kukushkin,et al.  Thin-film condensation processes , 1998 .

[8]  I. Berbezier,et al.  Dependence of SiGe growth instability on Si substrate orientation , 1998 .

[9]  P. Müller,et al.  The physical origin of the two-dimensional towards three-dimensional coherent epitaxial Stranski-Krastanov transition , 1996 .

[10]  N. Ledentsov,et al.  Spontaneous ordering of arrays of coherent strained islands. , 1995, Physical review letters.

[11]  S. A. Kukushkin,et al.  Kinetics of thin film nucleation from multi-component vapor , 1995 .

[12]  D. Aspnes,et al.  Optical-standard surfaces of single-crystal silicon for calibrating ellipsometers and reflectometers. , 1994, Applied optics.

[13]  Gerald Earle Jellison,et al.  Data analysis for spectroscopic ellipsometry , 1993 .

[14]  C. Ratsch,et al.  Equilibrium theory of the Stranski-Krastanov epitaxial morphology , 1993 .