Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20 °C

A Cl2/CH4/H2 inductively coupled plasma process without additional heating or wafer bonding is developed for the InP/InGaAsP material system. Vertical and smooth sidewalls can be observed in the scanning electron microscope images. The main factors of etch rate, selectivity, and sidewall roughness are analyzed relative to the gas concentration in a full factorial design of the experimental procedure. Under optimized conditions, an etch depth of more than 3 μm with smooth and vertical sidewalls can be obtained. A strong indication of a passivation effect of CH4 is obtained.

[1]  R. Wasielewski,et al.  Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl2/Ar/N2 chemistry , 2010 .

[2]  Fow-Sen Choa,et al.  Smooth and vertical-sidewall InP etching using Cl2/N2 inductively coupled plasma , 2004 .

[3]  S. Forrest,et al.  Photonic integration using asymmetric twin-waveguide (ATG) technology: part I-concepts and theory , 2005, IEEE Journal of Selected Topics in Quantum Electronics.

[4]  Sun Changzheng,et al.  Vertical and smooth, etching of InP by Cl2/CH4/Ar inductively coupled plasma at room temperature , 2003 .

[6]  T. Kazior,et al.  High rate CH4:H2 plasma etch processes for InP , 1997 .

[7]  C. Cardinaud,et al.  Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy , 2012 .

[8]  B. Corbett,et al.  Loss analysis and increasing of the fabrication tolerance of resonant coupling by tapering the mode beating section , 2011 .

[9]  Tao Mei,et al.  Study and optimization of room temperature inductively coupled plasma etching of InP using Cl2/CH4/H2 and CH4/H2 , 2006 .

[10]  S. J. Pearton,et al.  Etching of InP at ≳1 μm/min in Cl2/Ar plasma chemistries , 1996 .

[11]  Joseph H. Abeles,et al.  Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication , 2002 .

[12]  Ingrid Moerman,et al.  A review on fabrication technologies for the monolithic integration of tapers with III-V semiconductor devices , 1997 .

[13]  Sophie Bouchoule,et al.  Optimization of a Cl2–H2 inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures , 2006 .

[14]  Jean-Pierre Vilcot,et al.  Low-loss InGaAsP/InP submicron optical waveguides fabricated by ICP etching , 2004 .

[15]  Seng-Tiong Ho,et al.  InGaAsP-InP nanoscale waveguide-coupled microring lasers with submilliampere threshold current using Cl/sub 2/--N/sub 2/-based high-density plasma etching , 2005 .

[16]  Lee Chee-Wei,et al.  Room-Temperature Inductively Coupled Plasma Etching of InP Using Cl 2 N 2 and Cl 2 /CH 4 /H 2 , 2006 .