Inductively coupled high-density plasma-induced etch damage of GaN MESFETs

[1]  Albert G. Baca,et al.  Inductively coupled plasma-induced etch damage of GaN p-n junctions , 2000 .

[2]  C. G. Willison,et al.  High-Density Plasma-Induced Etch Damage of GaN , 1999 .

[3]  J. C. Zolper,et al.  A review of junction field effect transistors for high-temperature and high-power electronics , 1998 .

[4]  Michael S. Shur,et al.  GaN based transistors for high power applications , 1998 .

[5]  J. Yang,et al.  High-power 10-GHz operation of AlGaN HFET's on insulating SiC , 1998, IEEE Electron Device Letters.

[6]  R. M. Biefeld,et al.  In-situ reflectance monitoring during MOCVD of AlGaN , 1998 .

[7]  S. Pearton Characterization of damage in electron cyclotron resonance plasma etched compound semiconductors , 1997 .

[8]  M. Shur,et al.  Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures , 1997 .

[9]  M. Khan,et al.  Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes , 1997 .

[10]  Joan M. Redwing,et al.  AlGaN/GaN HEMTs grown on SiC substrates , 1997 .

[11]  S. J. Pearton,et al.  Extremely High Etch Rates of In‐Based III‐V Semiconductors in BCl3 / N 2 Based Plasma , 1996 .

[12]  M. N. Yoder,et al.  Wide bandgap semiconductor materials and devices , 1996 .

[13]  S. J. Pearton,et al.  Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges , 1990 .

[14]  S. Pang Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter Etching , 1986 .