Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric

A hybrid inorganic-organic device has been fabricated by incorporating redox active molecules in indium gallium zinc oxide thin film transistors. These devices show a clear modulation of source-drain current characteristics, which is associated with the quantized energy states of the redox active molecules. The molecules show discreet redox peaks in the current characteristics of transistors and a true-molecular-based charge transport has been demonstrated in a completely solid state device.

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