论文信息 - Room-temperature intersubband emission from GaInAs-AlAsSb quantum cascade structure

Room-temperature intersubband emission from GaInAs-AlAsSb quantum cascade structure

Room-temperature (300 K) intersubband electroluminescence has been obtained from a quantum cascade structure adopting triple-well vertical-transition active regions, based on Ga0.47In0.53As/AlAs0.56Sb0.44 heterostructures grown lattice-matched on InP substrate by molecular beam epitaxy. The emission peak wavelength varies from 4.3 µm at 77 K to 4.5 µm at 300 K.

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