Lattice dynamics of GaN/AlN superlattices
暂无分享,去创建一个
Guanghong Wei | Xide Xie | Guanghong Wei | Jian Zi | Kaiming Zhang | Kaiming Zhang | Xide Xie | J. Zi
[1] K. Hiramatsu,et al. Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE , 1991 .
[2] A. Gossard,et al. Observation of folded acoustic phonons in a semiconductor superlattice , 1980 .
[3] Ploog,et al. Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices. , 1985, Physical review letters.
[4] Yia-Chung Chang,et al. Theory of phonon dispersion relations in semiconductor superlattices , 1984 .
[5] D. Strauch,et al. Lattice dynamics of GaAs/AlAs superlattices , 1987 .
[6] P. Brüesch,et al. Phonons: Theory and Experiments III , 1982 .
[7] Guanghong Wei,et al. Lattice dynamics of zinc-blende GaN and AlN: I. Bulk phonons , 1996 .
[8] A. Gossard,et al. Optical Vibrational Modes and Electron-Phonon Interaction in GaAs Quantum Wells , 1984 .
[9] P. N. Keating,et al. Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure , 1966 .
[10] Richard M. Martin,et al. Elastic Properties of ZnS Structure Semiconductors , 1970 .
[11] H. Morkoç,et al. p‐type zinc‐blende GaN on GaAs substrates , 1993 .
[12] Manuel Cardona,et al. Light Scattering in Solids VII , 1982 .
[13] Theodore D. Moustakas,et al. Growth of GaN by ECR-assisted MBE , 1993 .
[14] M. Born,et al. Dynamical Theory of Crystal Lattices , 1954 .
[15] J. S. Pedersen. Surface relaxation by the keating model: A comparison with ab-initio calculations aind x-ray diffraction experiments , 1989 .
[16] Theodore D. Moustakas,et al. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon , 1991 .
[17] R. Tromp,et al. Subsurface relaxations in Si(111)-(7 × 7) structure models , 1985 .
[18] Chu,et al. Anisotropy of optical phonons and interface modes in GaAs-AlAs superlattices. , 1988, Physical review. B, Condensed matter.
[19] G. A. Baraff,et al. Theory of the silicon vacancy: An Anderson negative-Usystem , 1980 .
[20] M. Paisley,et al. Luminescence and lattice parameter of cubic gallium nitride , 1992 .
[21] S. J. Berkowitz,et al. Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon , 1992 .
[22] Miles V. Klein,et al. Raman scattering in superlattices: Anisotropy of polar phonons , 1980 .