Intrinsic nanofilamentation in resistive switching

Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and...

[1]  Chih-Hang Tung,et al.  Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs , 2002 .

[2]  G. Kresse,et al.  Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set , 1996 .

[3]  R. Waser,et al.  Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt ∕ TiO2 ∕ Pt Stack , 2007 .

[4]  N. S. Nesmelov,et al.  Electric breakdown in solid dielectrics , 1979 .

[5]  Harold Y. Hwang,et al.  An Emergent Change of Phase for Electronics , 2010, Science.

[6]  Qi Liu,et al.  Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. , 2010, ACS nano.

[7]  Frederick T. Chen,et al.  Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap , 2010, IEEE Electron Device Letters.

[8]  D. Ielmini,et al.  Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.

[9]  Xing Wu,et al.  Oxygen-Soluble Gate Electrodes for Prolonged High-$ \kappa$ Gate-Stack Reliability , 2011, IEEE Electron Device Letters.

[10]  Hiroshi Iwai,et al.  Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI , 1995 .

[11]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.

[12]  D. Morgan,et al.  Electrical phenomena in amorphous oxide films , 1970 .

[13]  Kresse,et al.  Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. , 1996, Physical review. B, Condensed matter.

[14]  F. Zeng,et al.  Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.

[15]  X. Bai,et al.  Real-time in situ HRTEM-resolved resistance switching of Ag2S nanoscale ionic conductor. , 2010, ACS nano.

[16]  H. M. Jang,et al.  Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors. , 2010, ACS nano.

[17]  Jung-Hyun Lee,et al.  Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. , 2009, Nano letters.

[18]  N. Wu,et al.  Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. , 2006, Physical Review Letters.

[19]  Kailash Gopalakrishnan,et al.  Overview of candidate device technologies for storage-class memory , 2008, IBM J. Res. Dev..

[20]  R. Rosezin,et al.  High density 3D memory architecture based on the resistive switching effect , 2009 .

[21]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[22]  Kin Leong Pey,et al.  The radial distribution of defects in a percolation path , 2008 .

[23]  Kin Leong Pey,et al.  The nature of dielectric breakdown , 2008 .

[24]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[25]  Kin Leong Pey,et al.  The physical origin of random telegraph noise after dielectric breakdown , 2009 .

[26]  T. Kauerauf,et al.  Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited) , 2011 .

[27]  S. Seo,et al.  Reproducible resistance switching in polycrystalline NiO films , 2004 .

[28]  S. Crank,et al.  Characterization of Defect Formation during Ni Silicidation for CMOS Device Application , 2005, Microscopy and Microanalysis.

[29]  Qi Liu,et al.  In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory , 2013 .

[30]  D. Ielmini,et al.  Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.

[31]  Hafner,et al.  Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium. , 1994, Physical review. B, Condensed matter.

[32]  M.K. Radhakrishnan,et al.  Gate dielectric-breakdown-induced microstructural damage in MOSFETs , 2004, IEEE Transactions on Device and Materials Reliability.

[33]  M. Kozicki,et al.  Nanoscale memory elements based on solid-state electrolytes , 2005, IEEE Transactions on Nanotechnology.

[34]  G. I. Meijer,et al.  Who Wins the Nonvolatile Memory Race? , 2008, Science.

[35]  Bielefeldt,et al.  Subatomic Features on the Silicon (111)-(7x7) Surface Observed by Atomic Force Microscopy. , 2000, Science.

[36]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .