论文信息 - Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility - 字舞流文

Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility

P. Scheiblin | S. Deleonibus | L. Hutin | V. Mazzocchi | L. Clavelier | S. Koffel | C. L. Royer