Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz

High performance HBTs with f/sub T/, f/sub max/ and BV/sub CEO/ values of 100 GHz, 130 GHz, and 2.5 V, respectively, are demonstrated in a 0.25 /spl mu/m BiCMOS technology without epitaxially-buried subcollector, and deep trench isolation. High voltage devices with BV/sub CEO/ values of up to 9 V and BV/sub CEO/ /spl times/ f/sub T/ products above 220 VGHz can be produced on the same chip with no special mask.

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