Mechanism of drain current droop in GaAs MESFETs
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The mechanisms responsible for the drain current droop in GaAs MESFETs are discussed and their relative contributions evaluated. Contrary to a common belief that the cause is mainly self-heating, it is shown on the example of a power MESFET that deep level effects (surface states and bulk traps) have a higher contribution.
[1] Adam K. Jastrzebski. Characterisation and Modelling of Temperature and Dispersion Effects in Power MESFETs , 1994, 1994 24th European Microwave Conference.