A 0.15µm gate InAlN/GaN HEMT with thin barrier layer

High quality thin barrier layer In0.18Al0.82N/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). A 0.15 μm gate InAlN/GaN HEMT was fabricated with 1A/mm drain current at zero gate bias. The device show good pinch-off performance. A high transconductance of 482 mS/mm and current gain cutoff frequency of 80GHz were measured without de-embedding.

[1]  Z. H. Li,et al.  Developing the Ka-band GaN power HEMT devices , 2012, Proceedings of 2012 5th Global Symposium on Millimeter-Waves.

[2]  G. Konstantinidis,et al.  InAlN/GaN HEMTs: a first insight into technological optimization , 2006, IEEE Transactions on Electron Devices.

[3]  Masanobu Hiroki,et al.  Electrical properties and device characteristics of InAlN/AlGaN/ AlN/GaN heterostructure field effect transistors , 2009 .

[4]  E. Kohn,et al.  High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111) , 2004 .

[5]  J. Kuzmik,et al.  Power electronics on InAlN/(In)GaN: Prospect for a record performance , 2001, IEEE Electron Device Letters.

[6]  E. Kohn,et al.  Unstrained InAlN/GaN HEMT structure , 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

[7]  Christophe Gaquiere,et al.  Status of the Emerging InAlN/GaN Power HEMT Technology , 2008 .