Highly transparent and resistive nanocrystalline ZnO-SnO 2 films prepared by rf magnetron sputtering

ZnO-SnO₂ films were deposited by rf magnetron sputtering using a ZnO-SnO₂ (2:1 molar ratio) target. The target was made from a mixture of ZnO and SnO₂ powders calcined at 800℃. The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon (O₂:Ar) was varied from 0% to 10%, and the substrate temperature was varied from 27℃ to 300℃. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO-SnO₂ films deposited in O₂:Ar = 10% exhibited resistivity higher than 10? Ωcm and transmittance of more than 80% in the visible range.

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