Inertial sensor technology using DRIE and wafer bonding with connecting capability

A novel device structure utilizing deep reactive ion etching (DRIE) technology and aligned wafer bonding was developed. In this structure, an interconnecting scheme for electrical signal routing with signal crossovers is realized. Also, the 'footing effect' and the 'bowing effect,' which are inherent in DRIE processes, were investigated in detail. A mask layout strategy for solving the footing effect was developed. A novel two-step etching process was developed for solving the bowing effect. Lateral accelerometers (one axis and two-axis) were successfully fabricated using this technology.

[1]  J. Arnold,et al.  Charging of pattern features during plasma etching , 1991 .

[2]  Martin A. Schmidt,et al.  IC process compatibility of sealed cavity sensors , 1997, Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97).

[3]  Masami Hane,et al.  Notching as an example of charging in uniform high density plasmas , 1996 .

[4]  Toshihisa Nozawa,et al.  The Electron Charging Effects of Plasma on Notch Profile Defects , 1995 .

[5]  M. Schmidt,et al.  Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher , 1999 .

[6]  J. Bustillo,et al.  Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments , 1997, Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97).

[7]  Nobuo Fujiwara,et al.  Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma , 1995 .

[8]  G. Kovacs,et al.  Force-balanced accelerometer with mG resolution, fabricated using Silicon Fusion Bonding and Deep Reactive Ion Etching , 1997, Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97).