论文信息 - Scaling of MoS2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance. - 字舞流文

Scaling of MoS2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance.

X. Bai | T. Taniguchi | Rong Yang | Wei Yang | D. Shi | Na Li | Shuopei Wang | Cheng Shen | Jian Tang | Luojun Du | Jinpeng Tian | Yanbang Chu | Qinqin Wang | Jieying Liu | Guangyu Zhang | Xudan Huang | Y. Ji | Biying Huang | Kenji Watanabe | Yalin Peng | Yancong Zhao