Current sensing IGBT structure with improved accuracy

A current sensing IGBT structure has been investigated in order to reduce collector-emitter voltage dependence of the sensing current ratio to the main IGBT current for short-circuit over-current protection. The operation physics of the current sensing IGBT during short-circuit was analyzed by numerical simulation and experimental results of the improved performance of the current sensing IGBT are presented.

[1]  Masahito Otsuki,et al.  The 3rd generation IGBT toward a limitation of IGBT performance , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[2]  S. P. Robb,et al.  Current sensing in IGBTs for short-circuit protection , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

[3]  Y. Seki,et al.  A new IGBT with a monolithic over-current protection circuit , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

[4]  Y. Sugawara,et al.  A high performance intelligent IGBT with overcurrent protection , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

[5]  Tat-Sing Paul Chow,et al.  Comparative study of integrated current sensors in n-channel IGBTs , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.