论文信息 - Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures

Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures

Metal–oxide–semiconductor (MOS) capacitors were fabricated on in situ doped n- and p-type Si1−yCy/Si heterostructures grown on Si substrates by chemical vapor deposition. Strained Si1−yCy epitaxial layers with substitutional carbon contents up to 1.6% were studied. High frequency and quasistatic capacitance–voltage (C–V) measurements exhibit well-behaved MOS characteristics, indicating high electronic material quality. Band alignments were extracted from MOS C–V measurements and one-dimensional device simulations performed over a range of temperatures. The conduction band energy of strained Si1−yCy is lower than that of Si by approximately 65 meV for 1 at. % carbon, while the valence band shows negligible offset to Si valence band.

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