Single Event Effects in Carbon Nanotube-Based Field Effect Transistors Under Energetic Particle Radiation

We present results from proton radiation experiments with carbon nanotube field effect transistors. Single event effects were observed consisting of drops in current, with very long durations (100 s of ms), and sudden, discrete switching events between quantized current levels. These studies are important for the development and understanding of advanced nano-electronic devices operating in the space radiation environment.

[1]  Francesco Mauri,et al.  Electron transport and hot phonons in carbon nanotubes. , 2005, Physical review letters.

[2]  R. Howard,et al.  Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise , 1984 .

[3]  Leon Balents,et al.  Luttinger-liquid behaviour in carbon nanotubes , 1998, Nature.

[4]  Daihua Zhang,et al.  Noise in carbon nanotube field effect transistor , 2006 .

[5]  S. Cronin,et al.  Large modulations in the intensity of Raman-scattered light from pristine carbon nanotubes. , 2009, Physical review letters.

[6]  Richard Martel,et al.  Controlling doping and carrier injection in carbon nanotube transistors , 2002 .

[7]  Brian J Landi,et al.  Radiation Effects in Single-Walled Carbon Nanotube Thin-Film-Transistors , 2010, IEEE Transactions on Nuclear Science.

[8]  Dekker,et al.  High-field electrical transport in single-wall carbon nanotubes , 1999, Physical review letters.

[9]  Seth M. Hubbard,et al.  Radiation Effects in Carbon Nanoelectronics , 2012 .

[10]  B. Dóra,et al.  Spin gap and Luttinger liquid description of the NMR relaxation in carbon nanotubes. , 2007, Physical review letters.

[11]  M. Fuhrer,et al.  Extraordinary Mobility in Semiconducting Carbon Nanotubes , 2004 .

[12]  R. Egger.  Luttinger liquid behavior in carbon nanotubes , 2000 .

[13]  Qian Wang,et al.  Electron transport in very clean, as-grown suspended carbon nanotubes , 2005, Nature materials.

[14]  N. Park,et al.  Ab initio study of the effect of water adsorption on the carbon nanotube field-effect transistor , 2006 .

[15]  Study of Random Telegraph Signals in Single-Walled Carbon Nanotube Field Effect Transistors , 2006, IEEE Transactions on Nanotechnology.

[16]  Ophir Vermesh,et al.  Hysteresis caused by water molecules in carbon nanotube field-effect transistors , 2003 .

[17]  J. Robinson,et al.  Total ionizing dose-hardened carbon nanotube thin-film transistors with silicon oxynitride gate dielectrics , 2011 .

[18]  P. McEuen,et al.  A tunable carbon nanotube electromechanical oscillator , 2004, Nature.

[19]  S. Kishimoto,et al.  Flexible high-performance carbon nanotube integrated circuits. , 2011, Nature nanotechnology.

[20]  Eric Pop,et al.  Negative differential conductance and hot phonons in suspended nanotube molecular wires. , 2005, Physical review letters.

[21]  S. Cronin,et al.  Gate voltage controllable non-equilibrium and non-ohmic behavior in suspended carbon nanotubes. , 2009, Nano letters.

[22]  G. Grüner,et al.  Source of 1∕f noise in carbon nanotube devices , 2006 .

[23]  Peter Burke,et al.  AC performance of nanoelectronics: towards a ballistic THz nanotube transistor , 2004 .

[24]  M. Meyyappan,et al.  Carbon Nanotube Sensors for Gas and Organic Vapor Detection , 2003 .

[25]  H. Dai,et al.  Quantum interference and ballistic transmission in nanotube electron waveguides. , 2001, Physical review letters.

[26]  M. Weissman.  1/f noise and other slow, nonexponential kinetics in condensed matter. , 1988 .

[27]  E. Petersen,et al.  Soft Errors Due to Protons in the Radiation Belt , 1981, IEEE Transactions on Nuclear Science.

[28]  P.K. Ko,et al.  Random telegraph noise of deep-submicrometer MOSFETs , 1990, IEEE Electron Device Letters.

[29]  Charlier,et al.  Structural and electronic properties of pentagon-heptagon pair defects in carbon nanotubes. , 1996, Physical review. B, Condensed matter.

[30]  M. Bockrath,et al.  The One-Dimensional Wigner Crystal in Carbon Nanotubes , 2007, 0710.0683.

[31]  H. Kataura,et al.  Direct observation of Tomonaga–Luttinger-liquid state in carbon nanotubes at low temperatures , 2003, Nature.

[32]  J. Tersoff,et al.  Random-telegraph-signal noise and device variability in ballistic nanotube transistors. , 2007, Nano letters.

[33]  Aaron A. Pesetski,et al.  Inherent linearity in carbon nanotube field-effect transistors , 2007 .

[34]  Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field Effect Transistors , 2014, IEEE Transactions on Nanotechnology.

[35]  P. McMarr,et al.  Creation of Individual Defects at Extremely High Proton Fluences in Carbon Nanotube $p{-}n$ Diodes , 2011, IEEE Transactions on Nuclear Science.

[36]  Stephen K. Brown,et al.  Concentrations of Volatile Organic Compounds in Indoor Air – A Review , 1994 .

[37]  Michael J. Uren,et al.  1/f and random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors , 1985 .