Microstructure evolution of AlN films deposited under various pressures by RF reactive sputtering

Abstract Wurtzite AlN (2H-AlN) films were deposited on p-type Si(100) by RF planar magnetron reactive sputtering under various pressures at a relatively low temperature (350 °C). X-Ray diffraction (XRD) and selected area electron diffraction (SAD) were used to study the microstructural features of the deposited films. XRD results showed that with the decrease in sputtering gas pressure, the preferred orientation of AlN films changed from (100) to (002). SAD results confirmed that a strong (100) texture existed in the films with (100) preferred orientation. Polycrystalline diffraction rings were recorded for the film where preferred orientation was not obvious. The AlN film deposited at 2 mtorr exhibited improved grain orientation along the c -axis. A further decrease in sputtering pressure to 1.4 mtorr produced an AlN film with two-domain structure instead of a perfect single crystal.

[1]  Alexander A. Balandin,et al.  Effect of phonon confinement on the thermoelectric figure of merit of quantum wells , 1998 .

[2]  Xiao-Hong Xu,et al.  Morphological properties of AlN piezoelectric thin films deposited by DC reactive magnetron sputtering , 2001 .

[3]  P. Russell,et al.  AlN thin films with controlled crystallographic orientations and their microstructure , 1987 .

[4]  G. Radhakrishnan.  Properties of AlN films grown at 350 K by gas‐phase excimer laser photolysis , 1995 .

[5]  J. Zapien,et al.  Aluminium nitride films prepared by reactive magnetron sputtering , 1997 .

[6]  Z. Zhang,et al.  Crystal growth. , 1999, Proceedings of the National Academy of Sciences of the United States of America.

[7]  H. Okano,et al.  Preparation of Aluminum Nitride Epitaxial Films by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering , 1994 .

[8]  H. M. Liaw,et al.  Comparative study of the elastic properties of polycrystalline aluminum nitride films on silicon by Brillouin light scattering , 1997 .

[9]  M. Penza,et al.  Low temperature growth of r.f. reactively planar magnetron-sputtered AlN films , 1995 .

[10]  P. D. Brown,et al.  The effect of growth condition on the structure of 2H - AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy , 1999 .

[11]  B. Ploss,et al.  A method for the measurement of the thermal, dielectric, and pyroelectric properties of thin pyroelectric films and their applications for integrated heat sensors , 1990 .

[12]  C. Eddy,et al.  Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition , 1996 .

[13]  Ashok Kumar,et al.  Structural characterization of pulsed laser-deposited AlN thin films on semiconductor substrates , 1997 .

[14]  B. Schröter,et al.  Hexagonal AlN films grown on nominal and off-axis Si(0 0 1) substrates , 2001 .

[15]  Y. N. Zhao,et al.  The effects of deposition parameters on the crystallographic orientation of AIN films prepared by RF reactive sputtering , 1997 .

[16]  J. W. Gerlach,et al.  Texture Development in Titanium Nitride Films Grown by Low-Energy Ion Assisted Deposition , 2000 .

[17]  AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques , 2001 .

[18]  C. Flamini,et al.  AIN thin film deposition by pulsed laser ablation of Al in NH3 , 1997 .

[19]  P. L. Richards,et al.  Measurements of thermal transport in low stress silicon nitride films , 1998 .

[20]  Charles G. Sodini,et al.  Low‐Temperature Deposition of Highly Textured Aluminum Nitride by Direct Current Magnetron Sputtering for Applications in Thin‐Film Resonators , 1999 .