论文信息 - Experimental Investigation on Superior PMOS Performance of Uniaxial Strained ≪110≫ Silicon Nanowire Channel By Embedded SiGe Source/Drain

Experimental Investigation on Superior PMOS Performance of Uniaxial Strained ≪110≫ Silicon Nanowire Channel By Embedded SiGe Source/Drain

Strained silicon nanowire transistor with embedded SiGe (e-SG) source/drain is investigated for the first time on experiments. By compressive stress induced by e-SG, PMOS performance is improved by about 85%. <110>-oriented nanowire channel also contributes 80% PMOS performance improvement relative to <100> direction. By combination of uniaxial stress and <110> channel direction, up to 136% PMOS performance enhancement is obtained so that superior PMOSFET to NMOSFET is for the first time observed with silicon channel material.

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