Resonant tunneling diodes with AlAs barrier: Guides for improving room‐temperature operation

In this communication experimental results of AlAs/GaAs/AlAs resonant tunneling diodes are compared to theory, and the effect of higher resonant states on the room‐temperature resonant tunneling current peak‐valley ratio is studied. It is shown that for a well thickness of 70 A, the leakage current through higher resonant states of the well can reduce the peak‐to‐valley current ratio by more than 400% when compared to a similar diode of 50‐A well thickness. Through these studies a summary of suggestions is listed, which is intended to improve the room‐temperature operation of resonant tunneling diodes.