An Efficient VLSI Design Approach to Reduce Static Power using Variable Body Biasing

In CMOS integrated circuit design there is a trade-off between static power consumption and technology scaling. Recently, the power density has increased due to combination of higher clock speeds, greater functional integration, and smaller process geometries. As a result static power consumption is becoming more dominant. This is a challenge for the circuit designers. However, the designers do have a few methods which they can use to reduce this static power consumption. But all of these methods have some drawbacks. In order to achieve lower static power consumption, one has to sacrifice design area and circuit performance. In this paper, we propose a new method to reduce static power in the CMOS VLSI circuit using Variable Body Biasing technique without being penalized in area requirement and circuit performance. Keywords—variable body biasing, state saving technique, stack effect, dual V-th, static power reduction.

[1]  Shin'ichiro Mutoh,et al.  1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS , 1995, IEEE J. Solid State Circuits.

[2]  Jun Cheol Park Sleepy Stack: a New Approach to Low Power VLSI and Memory , 2005 .

[3]  A. Chandrakasan,et al.  MTCMOS sequential circuits , 2001, Proceedings of the 27th European Solid-State Circuits Conference.

[4]  T. N. Vijaykumar,et al.  Gated-V/sub dd/: a circuit technique to reduce leakage in deep-submicron cache memories , 2000, ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514).

[5]  Jun-Cheol Park,et al.  Sleepy Stack Reduction of Leakage Power , 2004, PATMOS.

[6]  M. S. Islam,et al.  Dual stack method: A novel approach to low leakage and speed power product VLSI design , 2010, International Conference on Electrical & Computer Engineering (ICECE 2010).