Rapid identification of faulted loops in ionimplanted silicon
暂无分享，去创建一个
[1] H. Föll,et al. A simple method for the analysis of dislocation loops by means of the inside‐outside contrast on transmission electron micrographs , 1975 .
[2] K. Seshan,et al. Some new results in the characterization of defects in phosphorus ion-implanted silicon , 1975 .
[3] K. Ravi,et al. Oxidation‐induced stacking faults in silicon. I. Nucleation phenomenon , 1974 .
[4] R. S. Nelson,et al. Ion implantation , 1973 .
[5] D. Chick. European Conference on Ion Implantation , 1971 .
[6] P. Dobson,et al. Oxidation, defects and vacancy diffusion in silicon , 1969 .
[7] R. Bicknell. The distribution of condensed defect structures formed in annealed boron-implanted silicon , 1969, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.
[8] J. E. Lawrence. Stacking Faults in Annealed Silicon Surfaces , 1969 .
[9] W. J. Tunstall,et al. Diffraction contrast analysis of two-dimensional defects present in silicon after annealing , 1966 .
[10] R. Stickler,et al. Two-dimensional defects in silicon after annealing in wet oxygen , 1965 .
[11] A. Kelly,et al. Interstitial Dislocation Loops in Magnesium Oxide , 1961 .