论文信息 - Noise wave modeling of microwave transistors based on neural networks

Noise wave modeling of microwave transistors based on neural networks

The noise modeling of microwave FETs based on the noise-wave representation of a transistor-intrinsic circuit is considered. Frequency-dependent noise-wave temperatures are introduced as empirical model parameters and modeled using neural networks. In this way, online optimization in a circuit simulator is shifted to offline training of neural networks. An example of transistor-noise modeling for one specified component is shown. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 41: 294–297, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20120

[1] R. P. Meys,et al. A Wave Approach to the Noise Properties of Linear Microwave Devices , 1978 .

[2] S. W. Wedge,et al. Wave techniques for noise modeling and measurement , 1992 .

[3] M. Pospieszalski. Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .

[4] Vera Markovic,et al. The wave approach to noise modeling of microwave transistors by including the correlation effect , 2001 .

[5] Vera Markovic,et al. A wave approach to signal and noise modeling of dual-gate MESFET , 2002 .