Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogen

Oxide growth kinetics of SiO2 films grown on silicon at 950 to 1100 °C in an O2/N2 mixture is empirically studied. It is found that a linear‐parabolic law is in excellent agreement with the oxidation data under the oxygen partial pressure PO2 of 1 or 10−1 atm. However, a parabolic law is obtained at 10−2 atm, and an inverse‐logarithmic law at 10−3 atm. The Mott‐Cabrera oxidation rate equation is adapted to the thermal oxidation of silicon in the case of PO2≲10−2 atm. Finally, 43.9 kcal/mole is derived as the activation energy value of silicon atoms entering into the oxide.

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